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EG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2A

EG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2AZoom

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EG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2A

EG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2AEG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2AProvide EG3112 SOP8 high power MOS transistor IGBT transistor gate drive chip withstand voltage 600V output current 2A by 屹晶微电子 at chinahao.com. Product #: 5485234648304.46In stock